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Abstract Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene (BLG), which has weak SOC, intrinsic Lifshitz transitions and concomitant van-Hove singularities lead to the emergence of many-body correlated phases. Layer-selective SOC can be proximity induced by adding a layer of tungsten diselenide (WSe₂) on its one side. By applying an electric displacement field, the system can be tuned across a spectrum wherein electronic correlation, SOC, or a combination of both dominates. Our investigations reveal an intricate phase diagram of proximity-induced SOC-selective BLG. Not only does this phase diagram include those correlated phases reminiscent of SOC-free doped BLG, but it also hosts unique SOC-induced states allowing a compelling measurement of valleyg-factor and a correlated insulator at charge neutrality, thereby showcasing the remarkable tunability of the interplay between interaction and SOC in WSe₂enriched BLG. 

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon that features quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene-monolayer tungsten disulfide (WS₂) heterostructure. Distinct from other experimentally confirmed QAHE systems, this system has neither magnetic element nor moiré superlattice effect. The QAH states emerge at charge neutrality and feature Chern numbersC= ±5 at temperatures of up to about 1.5 kelvin. This large QAHE arises from the synergy of the electron correlation in intrinsic flat bands of pentalayer graphene, the gate-tuning effect, and the proximity-induced Ising spin-orbit coupling. Our experiment demonstrates the potential of crystalline two-dimensional materials for intertwined electron correlation and band topology physics and may enable a route for engineering chiral Majorana edge states. 

Abstract Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe₂sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm²/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.